TK8R2E06PL,S1X
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TK8R2E06PL,S1X |
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Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | PB-F POWER MOSFET TRANSISTOR TO- |
Datenblätte: | None |
RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.20 |
10+ | $1.075 |
100+ | $0.838 |
500+ | $0.6923 |
1000+ | $0.5465 |
2000+ | $0.5101 |
5000+ | $0.4846 |
10000+ | $0.4664 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 2.5V @ 300µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-220 |
Serie | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 10V |
Verlustleistung (max) | 81W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Tube |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | 175°C |
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 1990 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain-Source-Spannung (Vdss) | 60 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 50A (Tc) |
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![]() TK8R2E06PL,S1XToshiba Semiconductor and Storage |
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